RS7502
80V Half Bridge GaN Driver with Integrated Bootstrap Diode
Features
High-Speed Performance
- The RS7502 is optimized for 80V half-bridge GaN FETs
- Fast 16ns typical propagation delay
- Tight 1.5ns typical propagation delay matching
- Fast rise and fall times
- Low quiescent power consumption
Flexible Gate Drive
- Independent high-side and low-side CMOS-compatible inputs
- Independent pull-up and pull-down outputs
- Adjustable turn-on and turn-off gate drive strength
- Strong pull-down capability helps prevent unintended turn-on
Integrated Features
This section is slightly better than “Protection” because the bootstrap diode is really an integration benefit.
- Integrated bootstrap diode
- Independent high-side and low-side gate control
- Optimized for synchronous buck, boost, and half-bridge converters
Protection Features
- VDD undervoltage lockout (UVLO)
- Bootstrap supply undervoltage lockout (UVLO)
Package & Reliability
- Compact 2.5 × 2.5mm, 14-pin QFN package
- Thermally efficient exposed-pad package
- RoHS compliant
- Green package
Description
RS7502 80V GaN Gate Driver for High-Speed Power Conversion
The RS7502 is a high-speed 80V half-bridge GaN gate driver designed to maximize the performance of enhancement-mode GaN FETs in high-frequency power conversion systems. Combining fast switching performance with an integrated bootstrap diode and flexible gate drive control, the RS7502 enables designers to build compact, efficient, and reliable power converters while reducing external component count.
Optimized for synchronous buck, boost, half-bridge, and full-bridge converter topologies, the RS7502 delivers 16ns typical propagation delay with 1.5ns typical channel-to-channel delay matching for precise switching synchronization and improved converter efficiency.
Housed in a compact 2.5 × 2.5mm 14-pin QFN package, the RS7502 offers excellent thermal performance, simplified PCB assembly, and straightforward optical inspection, making it an excellent choice for production-ready power supply designs.
Designed for High-Frequency GaN Switching
Modern GaN FETs enable significantly higher switching frequencies and lower switching losses than conventional silicon MOSFETs. To fully realize these advantages, designers require a gate driver capable of delivering fast, accurate, and repeatable switching performance.
The RS7502 is specifically optimized for high-speed GaN switching applications. Its low propagation delay and tight timing matching help minimize switching losses while maintaining precise synchronization between the high-side and low-side power devices.
Independent pull-up and pull-down outputs allow designers to fine-tune gate drive characteristics, balancing switching speed, efficiency, EMI performance, and voltage overshoot for a wide range of GaN FETs.
Optimized for Production Power Supply Designs
While compact enough for high-density applications, the RS7502’s QFN package provides several advantages for volume manufacturing.
Compared to wafer-level chip scale packages, the exposed-pad QFN package offers:
- Easier PCB assembly
- Improved solder joint inspection
- Excellent thermal performance
- Robust mechanical reliability
- Simplified manufacturing and rework
These characteristics make the RS7502 particularly well suited for production power supplies used in data centers, telecommunications equipment, industrial systems, and enterprise computing platforms.
Flexible Gate Drive for Maximum Design Freedom
The RS7502 features independent CMOS-compatible inputs for both the high-side and low-side drivers, providing designers with maximum flexibility when implementing synchronous switching architectures.
Separate pull-up and pull-down outputs enable independent optimization of gate turn-on and turn-off characteristics, allowing designers to optimize converter performance for efficiency, switching speed, EMI compliance, and device protection.
The integrated bootstrap diode further reduces external component count while simplifying high-side gate drive circuitry, helping reduce PCB area and overall design complexity.
Integrated Protection Enhances System Reliability
The RS7502 incorporates integrated protection features that improve system robustness while simplifying power supply design.
Integrated protection features include:
- VDD undervoltage lockout (UVLO)
- Bootstrap supply undervoltage lockout (UVLO)
- Integrated bootstrap diode
- Independent high-side and low-side gate control
- Strong gate pull-down capability to help prevent unintended switching
These features help ensure reliable operation during startup, shutdown, and transient operating conditions while protecting both the gate driver and external GaN FETs.
Complements Reed Semiconductor PWM Controllers
The RS7502 is designed to work seamlessly with Reed Semiconductor’s digital and analog PWM controller portfolio, enabling complete high-performance power conversion solutions.
Recommended companion controllers include:
- RS16K20 Digital Multiphase PWM Controller
- RS17G22 High-Performance PWM Controller
- RS18C22 Analog Multiphase PWM Controller
- RS18G30 Digital PWM Controller with PMBus
- RS19C20 Digital PWM Controller
- RS19G20 20-Phase Digital PWM Controller with PMBus
Together, these devices provide scalable solutions for high-current, high-frequency power systems used in AI servers, enterprise computing, networking, and industrial applications.
Ideal for High-Density Power Applications
The RS7502 is well suited for a wide range of high-performance power conversion applications, including:
- Synchronous buck converters
- Half-bridge and full-bridge power converters
- High-frequency DC-DC converters
- Active clamp forward converters
- AI server power systems
- High-performance computing platforms
- Telecommunications power supplies
- Industrial power systems
- GaN-based power modules
Its combination of fast switching performance, compact QFN packaging, and integrated functionality makes it an ideal solution for next-generation power architectures.
Accelerate Efficient GaN Power Designs
The RS7502 combines the speed, flexibility, and reliability needed to unlock the full potential of modern GaN power devices. Fast 16ns propagation delay, 1.5ns delay matching, independent gate drive outputs, and an integrated bootstrap diode simplify high-frequency converter design while maximizing efficiency and reducing external components.
When paired with Reed Semiconductor’s advanced PWM controllers, the RS7502 provides a complete gate drive solution for compact, efficient power converters serving AI infrastructure, enterprise servers, telecommunications equipment, industrial automation, and next-generation high-density power systems.
If you need a smaller footprint, check out the RS7501 in an ultra-compact WLCSP package.
