RS7501
80V Half Bridge GaN Driver with Integrated Bootstrap Diode
Features
High-Speed Performance
- The RS7501 is optimized for 80V half-bridge GaN FETs
- Fast 16ns typical propagation delay
- Tight 1.5ns typical propagation delay matching
- Fast rise and fall times
- Low power consumption
Flexible Gate Drive
- Independent high-side and low-side CMOS-compatible inputs
- Separate pull-up and pull-down outputs
- Independently adjustable turn-on and turn-off gate drive strength
- Strong sink capability helps prevent unintended turn-on
Integrated Protection
- Integrated bootstrap diode
- VDD undervoltage lockout (UVLO)
- Bootstrap supply undervoltage lockout (UVLO)
Compact Implementation
- Ultra-compact 12-ball WLCSP package
- Body size: 1.6 × 1.6 mm
- RoHS compliant
- Green package
Description
RS7501 80V GaN Gate Driver for High-Frequency Power Conversion
The RS7501 is a high-speed 80V half-bridge GaN gate driver designed to maximize the performance of enhancement-mode GaN FETs in high-frequency power conversion applications. Featuring an integrated bootstrap diode, independent high-side and low-side CMOS-compatible inputs, and separate pull-up and pull-down outputs, the RS7501 enables designers to optimize switching performance while simplifying gate drive implementation.
Designed for synchronous buck, boost, half-bridge, and full-bridge power converters, the RS7501 delivers 16ns typical propagation delay with 1.5ns typical propagation delay matching, ensuring precise switching synchronization and excellent efficiency. Its ultra-compact 1.6mm × 1.6mm WLCSP package makes it an excellent choice for applications where PCB area, switching speed, and power density are critical.
Whether used in AI servers, telecommunications equipment, industrial power supplies, or high-density DC-DC converters, the RS7501 provides the speed, flexibility, and reliability required for next-generation GaN-based power systems.
Optimized for High-Speed GaN Power Stages
Gallium Nitride (GaN) devices offer significantly lower switching losses and faster switching speeds than traditional silicon MOSFETs, but achieving their full performance requires a gate driver specifically designed for high-speed operation. The RS7501 is optimized to drive both high-side and low-side GaN FETs while maintaining precise timing and minimizing switching losses.
With independent gate drive outputs, designers can independently optimize turn-on and turn-off gate resistance to balance switching speed, efficiency, electromagnetic interference (EMI), and voltage overshoot. Tight 1.5ns propagation delay matching helps maintain excellent synchronization between switching devices, making the RS7501 ideal for high-frequency converter topologies.
The integrated bootstrap diode further simplifies high-side gate drive implementation by reducing external component count and minimizing PCB routing complexity.
Designed to Pair with Reed Semiconductor PWM Controllers
The RS7501 complements Reed Semiconductor’s PWM controller portfolio, providing a complete control and gate drive solution for high-frequency DC-DC power converters. Together, Reed PWM controllers and the RS7501 enable designers to build compact, efficient power stages with optimized switching performance and simplified system integration.
Recommended companion products include:
- RS16K20 – Digital multiphase PWM controller
- RS17G22 – High-density multiphase PWM controller
- RS18C22 – Analog multiphase PWM controller
- RS18G30 – Digital PWM controller with PMBus
- RS19C20 – Digital controller for AI and server applications
- RS19G20 – Digital 20-phase PWM controller with PMBus
This combination provides a complete solution for applications requiring high-frequency switching, excellent transient response, and maximum system efficiency.
Flexible Gate Drive for Optimized Switching Performance
The RS7501 provides independent CMOS-compatible inputs for both the high-side and low-side drivers, allowing maximum flexibility when implementing synchronous switching topologies. Separate pull-up and pull-down outputs enable designers to independently tune turn-on and turn-off gate currents, optimizing switching characteristics for specific GaN devices and operating conditions.
Fast rise and fall times reduce switching losses while helping maximize converter efficiency at elevated switching frequencies. The driver’s strong pull-down capability also helps prevent unintended gate turn-on caused by high dV/dt switching events, improving converter reliability and system robustness.
These capabilities make the RS7501 an excellent choice for high-performance power converters operating at increasingly higher switching frequencies.
Integrated Protection Improves System Reliability
The RS7501 incorporates several integrated protection features that help simplify design while improving long-term reliability.
Integrated protection includes:
- VDD undervoltage lockout (UVLO)
- Bootstrap supply undervoltage lockout (UVLO)
- Integrated bootstrap diode
- Independent high-side and low-side gate control
- Strong gate pull-down capability
Together, these features help ensure reliable gate drive operation while protecting both the driver and external GaN FETs during startup and transient operating conditions.
Ideal for High-Frequency Power Converter Applications
The RS7501 is optimized for applications requiring fast switching speeds, compact implementation, and high efficiency.
Typical applications include:
- Synchronous buck converters
- Half-bridge power converters
- Full-bridge DC-DC converters
- High-frequency DC-DC power supplies
- Active clamp forward converters
- AI server power systems
- Telecommunications power supplies
- Industrial power converters
- High-density power modules
- GaN-based power conversion systems
Its combination of fast propagation delay, compact packaging, and flexible gate drive capability enables engineers to develop highly efficient power converters with excellent transient performance.
Accelerate Next-Generation GaN Power Designs
The RS7501 integrates the high-speed performance, flexibility, and protection features needed to fully utilize modern GaN FET technology. With fast 16ns propagation delay, tight delay matching, independent gate drive outputs, and an integrated bootstrap diode, the device simplifies high-frequency converter design while maximizing efficiency and minimizing external component count.
When combined with Reed Semiconductor’s PWM controllers and power management portfolio, the RS7501 enables complete, high-performance power solutions for AI infrastructure, enterprise computing, networking equipment, telecommunications systems, and industrial applications. The result is a scalable platform that helps engineers reduce design complexity, improve switching performance, and accelerate development of next-generation high-frequency power converters.
Looking for a QFN version? Checkout the RS7502.
